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| semix ? 2s trench igbt modules semix 452gb126hds semix 452gal126hds semix 452gar126hds preliminary data features ! typical applications " # $ % # gb gal gar absolute maximum ratings & ' ( ) # symbol conditions values units igbt * & + + , & ' . + ( / 0 + 1 1 + " , 2 3 * 4 + + " 5 6 & + 7 ) 8 % 2 " , 8 9 : ; / + < < < = * ' + * & ' ( " ) * < / + + + inverse diode , > & ' . + ( 1 ' + & / + " , > 2 3 * 4 + + " , > 3 * + ? < ? 7 & ' ( * @ + + " characteristics & ' ( ) # symbol conditions min. typ. max. units igbt 5 5 ) , * & " ' ' ) . 4 ) ' , 5 + ) ) 7 & ' * & ' ( & " 8 7 & ' * & ' ( * + ) @ * ) & * ) * 5 * ' ) 7 & ' * & ' ( & ) & 1 ) 0 1 ) & / ) ' a , 1 + + " ) 5 * ' ) 7 & ' * & ' ( ) * ) 0 & & ) * ' & ) / ' # # & & > 5 + ) & ' ) * 3 b * ) & > * > c * . 2 d = d ; ) & ' * & ' ( a # e 4 + + ) , 1 + + " & . ' e 4 ' # e 5 6 * ' 4 1 ' e * 1 + 2 5 2 5 & a ) 7 * & ' ( 1 ' / ' f inverse diode > , > 1 + + " ? 5 + ? 7 & ' * & ' ( ) * ) 4 * ) 4 * ) . * ) . 8 7 & ' * & ' ( * + ) . * ) * + ) @ 7 & ' * & ' ( & & ) 0 a , 2 2 3 , > 1 + + " ? 7 & ' * & ' ( 1 0 ' " g # e # 4 & + + " e h 0 ' h 5 ; * ' 1 1 f thermal characteristics 2 7 ; , 5 i + ) + . j e k 2 7 ; l , l # + ) * . j e k 2 7 ; > l > k l j e k 2 ; # + ) + / ' j e k temperature sensor 2 & ' & ' ( ' 6 ' m n o i & ' e . ' 2 & 2 * p q i * e & ; * e * r ? q j r ? i 1 / & + j mechanical data 3 e 3 n 3 ' e 3 4 1 e & ) ' ' e ' 9 & ' + semix 452gb126hds 1 06-04-2006 ges ? by semikron fig. 1 output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic semix 452gb126hds 2 06-04-2006 ges ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt fig. 10 transient thermal impedance of fwd fig. 11 cal diode forward characteristic fig. 12 typ. cal diode peak reverse recovery current semix 452gb126hds 3 06-04-2006 ges ? by semikron fig. 13 typ. cal diode recovered charge 3 s & 5 i % 3 s & this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 452gb126hds 4 06-04-2006 ges ? by semikron |
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